0947-8396

Phonon‑assisted cyclotron resonance in special symmetric quantum wells

Applied Physics A: Materials Science and Processing, 2018
Lĩnh vực: Vật lý các chất cô đặc
Danh mục: SCIE
Tác giả: Pham Dinh Khang, Nguyen N. Hieu, Lê Thị Thu Phương, Bùi Đình Hợi, Chuong V. Nguyen, Huynh V. Phuc (Chính)
Liên kết: https://link.springer.com/article/10.1007%2Fs00339-018-2083-6

0306-8919

Theoretical investigation of hot electron cooling process in GaAs/AlAs cylindrical quantum wire under the influence of an intense electromagnetic wave

Optical and Quantum Electronics, 2018
Lĩnh vực: Vật lý các chất cô đặc
Danh mục: SCIE
Tác giả: Pham Dinh Khang, Nguyen Van Chuong, Nguyen Ngoc Hieu, Huynh Vinh Phuc, Bùi Đình Hợi (Chính), Bui My Hoang Hoa, Lê Thị Thu Phương (Chính)
Liên kết: https://link.springer.com/article/10.1007%2Fs11082-018-1606-x

0030-4026

Magneto-optical absorption in quantum dot via two-photon absorption process

Optik, 2018
Lĩnh vực: Vật lý các chất cô đặc
Danh mục: SCIE
Tác giả: Doan Quoc Khoa, Nguyen Ngoc Hieu, Tran Ngoc Bich, Lê Thị Thu Phương, Bùi Đình Hợi, Tran Phan Thuy Linh, Quach Kha Quang, Nguyen Van Chuong, Huynh Vinh Phuc (Chính)
Liên kết: https://www.sciencedirect.com/science/article/pii/S0030402618311495

0749-6036

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

Superlattices and Microstructures, 2018
Lĩnh vực: Vật lý các chất cô đặc
Danh mục: SCIE
Tác giả: Pham Dinh Khang, Nguyen Ngoc Hieu, Huynh Vinh Phuc, Victor Ilyasov, Bùi Đình Hợi, El Mustapha FEDDI, Nguyen Thuan
Liên kết: https://www.sciencedirect.com/science/article/pii/S0749603618311595

0304-8853, E-ISSN: 1873-4766

The role of electronic dopant on full band in-plane RKKY coupling in armchair graphene nanoribbons-magnetic impurity system

Journal of Magnetism and Magnetic Materials, 2018
Lĩnh vực: VẬT LÝ
Danh mục: SCIE
Tác giả: Bùi Đình Hợi, Mohsen Yarmohammadi (Chính)
Liên kết: https://www.sciencedirect.com/science/article/abs/pii/S0304885317334753?via%3Dihub

0304-8853

Invalidity of the Fermi liquid theory and magnetic phase transition in quasi-1D dopant-induced armchair-edged graphene nanoribbons

Journal of Magnetism and Magnetic Materials, 2018
Lĩnh vực: VẬT LÝ
Danh mục: SCIE
Tác giả: Bùi Đình Hợi, Masoumeh Davoudiniy, Mohsen Yarmohammadi (Chính)
Liên kết: https://www.sciencedirect.com/science/article/abs/pii/S0304885317332560?via%3Dihub

Insulator-semimetallic transition in quasi-1D charged impurity-infected armchair boron-nitride nanoribbons

Physics Letters, Section A: General, Atomic and Solid State Physics, 2018
Lĩnh vực: VẬT LÝ
Danh mục: SCIE
Tác giả: Bùi Đình Hợi, MohsenYarmohammadi (Chính)
Liên kết: https://www.sciencedirect.com/science/article/abs/pii/S0375960118301725?via%3Dihub

0304-8853, E-ISSN: 1873-4766

The Kubo-Greenwood spin-dependent electrical conductivity of 2D transition-metal dichalcogenides and group-IV materials: A Green’s function study

Journal of Magnetism and Magnetic Materials, 2018
Lĩnh vực: VẬT LÝ
Danh mục: SCIE
Tác giả: Bùi Đình Hợi, Mohsen Yarmohammadi (Chính)
Liên kết: https://www.sciencedirect.com/science/article/abs/pii/S030488531730656X?via%3Dihub

0038-1098

Coherent control of the route of magnetic phases in quasi-1D armchair graphene nanoribbons via doping in the presence of electronic correlations

Solid State Communications, 2018
Lĩnh vực: VẬT LÝ
Danh mục: SCIE
Tác giả: Bùi Đình Hợi, Mohsen Yarmohammadic (Chính), Masoumeh Davoudiniy
Liên kết: https://www.sciencedirect.com/science/article/pii/S003810981730409X?via%3Dihub

1386-9477, E-ISSN: 1873-1759

Spin- and valley-dependent electrical conductivity of ferromagnetic group-IV 2D sheets in the topological insulator phase

Physica E: Low-Dimensional Systems and Nanostructures, 2018
Lĩnh vực: VẬT LÝ
Danh mục: SCIE
Tác giả: Bùi Đình Hợi, Mohsen Yarmohammadi (Chính), Kavoos Mirabbaszadeh, Hamidreza Habibiyan
Liên kết: https://www.sciencedirect.com/science/article/pii/S1386947717314741?via%3Dihub

0361-5235

Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations

Journal of Electronic Materials, 2018
Lĩnh vực: VẬT LÝ
Danh mục: SCIE
Tác giả: Bùi Đình Hợi, et al
Liên kết: https://link.springer.com/article/10.1007/s11664-017-5843-8

0039-6028

First principle study on the electronic properties and Schottky contact of graphene adsorbed on MoS2 monolayer under applied out-plane strain

Surface Science, 2018
Lĩnh vực: VẬT LÝ
Danh mục: SCIE
Tác giả: Huynh Vinh Phuc, Nguyen Ngoc Hieu, Bùi Đình Hợi, Lê Thị Thu Phương, Nguyen Van Chuong (Chính)
Liên kết: https://www.sciencedirect.com/science/article/pii/S0039602817306805